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TELEFUNKEN Semiconductors
BZT55C...
Silicon Epitaxial Planar Z-Diodes
Features
D Very sharp reverse characteristic D Low reverse current level D Very high stability D Low noise D Available with tighter tolerances
Applications
Voltage stabilization
94 9373
Absolute Maximum Ratings
Tj = 25_C Parameter Power dissipation Z-current Junction temperature Storage temperature range Test Conditions RthJAx300K/W Type Symbol PV IZ Tj Tstg Value 500 PV/VZ 175 -65...+175 Unit mW mA C C
Maximum Thermal Resistance
Tj = 25_C Parameter Junction ambient Test Conditions on PC board 50mmx50mmx1.6mm Symbol RthJA Value 500 Unit K/W
Characteristics
Tj = 25_C Parameter Forward voltage Test Conditions IF=200mA Type Symbol VF Min Typ Max 1.5 Unit V
Rev. A1: 12.12.1994
1
BZT55C...
Type BZT55C... 2V4 2V7 3V0 3V3 3V6 3V9 4V3 4V7 5V1 5V6 6V2 6V8 7V5 8V2 9V1 10 11 12 13 15 16 18 20 22 24 27 30 33 36 39 43 47 51 56 62 68 75
1)
TELEFUNKEN Semiconductors
rzjk at W < 600 < 600 < 600 < 600 < 600 < 600 < 600 < 600 < 550 < 450 < 200 < 150 < 50 < 50 < 50 < 70 < 70 < 90 < 110 < 110 < 170 < 170 < 220 < 220 < 220 < 220 < 220 < 220 < 220 < 500 < 600 < 700 < 700 < 1000 < 1000 < 1000 < 1500
2)
VZnorm V 2.4 2.7 3.0 3.3 3.6 3.9 4.3 4.7 5.1 5.6 6.2 6.8 7.5 8.2 9.1 10 11 12 13 15 16 18 20 22 24 27 30 33 36 39 43 47 51 56 62 68 75
IZT for VZT 1) and rzjT mA V W 5 2.28 to 2.56 < 85 5 2.5 to 2.9 < 85 5 2.8 to 3.2 < 90 5 3.1 to 3.5 < 90 5 3.4 to 3.8 < 90 5 3.7 to 4.1 < 90 5 4.0 to 4.6 < 90 5 4.4 to 5.0 < 80 5 4.8 to 5.4 < 60 5 5.2 to 6.0 < 40 5 5.8 to 6.6 < 10 5 6.4 to 7.2 <8 5 7.0 to 7.9 <7 5 7.7 to 8.7 <7 5 8.5 to 9.6 < 10 5 9.4 to 10.6 < 15 5 10.4 to 11.6 < 20 5 11.4 to 12.7 < 20 5 12.4 to 14.1 < 26 5 13.8 to 15.6 < 30 5 15.3 to 17.1 < 40 5 16.8 to 19.1 < 50 5 18.8 to 21.2 < 55 5 20.8 to 23.3 < 55 5 22.8 to 25.6 < 80 5 25.1 to 28.9 < 80 5 28 to 32 < 80 5 31 to 35 < 80 5 34 to 38 < 80 2.5 37 to 41 < 90 2.5 40 to 46 < 90 2.5 44 to 50 < 110 2.5 48 to 54 < 125 2.5 52 to 60 < 135 2.5 58 to 66 < 150 2.5 64 to 72 < 200 2.5 70 to 79 < 250
IZK mA 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 0.5 0.5 0.5 0.5 0.5 0.5 0.5
IR and IR 2) at mA mA < 100 < 50 < 10 < 50 <4 < 40 <2 < 40 <2 < 40 <2 < 40 <1 < 20 < 0.5 < 10 < 0.1 <2 < 0.1 <2 < 0.1 <2 < 0.1 <2 < 0.1 <2 < 0.1 <2 < 0.1 <2 < 0.1 <2 < 0.1 <2 < 0.1 <2 < 0.1 <2 < 0.1 <2 < 0.1 <2 < 0.1 <2 < 0.1 <2 < 0.1 <2 < 0.1 <2 < 0.1 <2 < 0.1 <2 < 0.1 <2 < 0.1 <2 < 0.1 <5 < 0.1 <5 < 0.1 <5 < 0.1 < 10 < 0.1 < 10 < 0.1 < 10 < 0.1 < 10 < 0.1 < 10
VR V 1 1 1 1 1 1 1 1 1 1 2 3 5 6.2 6.8 7.5 8.2 9.1 10 11 12 13 15 16 18 20 22 24 27 30 33 36 39 43 47 51 56
TKVZ %/K -0.09 to -0.06 -0.09 to -0.06 -0.08 to -0.05 -0.08 to -0.05 -0.08 to -0.05 -0.08 to -0.05 -0.06 to -0.03 -0.05 to +0.02 -0.02 to +0.02 -0.05 to +0,05 0.03 to 0.06 0.03 to 0.07 0.03 to 0.07 0.03 to 0.08 0.03 to 0.09 0.03 to 0.1 0.03 to 0.11 0.03 to 0.11 0.03 to 0.11 0.03 to 0.11 0.03 to 0.11 0.03 to 0.11 0.03 to 0.11 0.04 to 0.12 0.04 to 0.12 0.04 to 0.12 0.04 to 0.12 0.04 to 0.12 0.04 to 0.12 0.04 to 0.12 0.04 to 0.12 0.04 to 0.12 0.04 to 0.12 0.04 to 0.12 0.04 to 0.12 0.04 to 0.12 0.04 to 0.12
tp/T 100 ms, tighter tolerances available on request.
at Tj = 150C
2
Rev. A1: 12.12.1994
TELEFUNKEN Semiconductors
BZT55C...
1000 DV - Voltage Change ( mV ) Z
Typical Characteristics (Tj = 25_C unless otherwise specified)
600 Ptot - Total Power Dissipation ( mW ) 500 400 300 200 100 0 0
95 9602
Tj = 25C 100
IZ=5mA 10
1 40 80 120 160 200
95 9598
0
5
10
15
20
25
Tamb - Ambient Temperature ( C )
VZ - Z-Voltage ( V )
Figure 1 : Total Power Dissipation vs. Ambient Temperature
Figure 2 : Typical Change of Working Voltage under Operating Conditions at Tamb=25C TK VZ - Temperature Coefficient of VZ ( 10 -4 /K ) 15
1.3 VZtn - Relative Voltage Change VZtn=VZt/VZ(25C) 1.2
TKVZ=10 10-4/K 8 6 10-4/K 10-4/K 10-4/K 10-4/K
10
1.1
4 2
5 IZ=5mA 0
1.0 0.9 0.8 -60
0 -2 10-4/K -4 10-4/K
-5 0 10 20 30 40 50 VZ - Z-Voltage ( V )
0
60
120
180
240
95 9599
Tj - Junction Temperature ( C )
95 9600
Figure 3 : Typical Change of Working Voltage vs. Junction Temperature
Figure 4 : Temperature Coefficient of Vz vs. Z-Voltage
200 C D - Diode Capacitance ( pF ) IF - Forward Current ( mA )
100
150 VR = 2V 100 Tj = 25C
10 Tj = 25C 1
0.1 0.01 0.001
50
0 0
95 9601
5
10
15
20
25
95 9605
0
0.2
0.4
0.6
0.8
1.0
VZ - Z-Voltage ( V ) Figure 5 : Diode Capacitance vs. Z-Voltage
VF - Forward Voltage ( V ) Figure 6 : Forward Current vs. Forward Voltage
Rev. A1: 12.12.1994
3
BZT55C...
100 50
TELEFUNKEN Semiconductors
IZ - Z-Current ( mA )
Ptot=500mW Tamb=25C 60
IZ - Z-Current ( mA )
80
40
Ptot=500mW Tamb=25C
30
40 20 0 0 4 8 12 16 20
20 10 0 15 20 25 30 35
95 9604
VZ - Z-Voltage ( V ) Figure 7 : Z-Current vs. Z-Voltage
95 9607
VZ - Z-Voltage ( V ) Figure 8 : Z-Current vs. Z-Voltage
1000 r Z - Differential Z-Resistance ( W )
IZ=1mA 100
5mA 10 10mA
1 0
95 9606
Tj = 25C 5 10 15 20 25
VZ - Z-Voltage ( V ) Figure 9 : Differential Z-Resistance vs. Z-Voltage
Z thp - Thermal Resistance for Pulse Cond. (K/W)
1000
tp/T=0.5 100 tp/T=0.2 Single Pulse 10 tp/T=0.1 tp/T=0.05 1 10-1 tp/T=0.02 iZM=(-VZ+(VZ2+4rzjDT/Zthp)1/2)/(2rzj) tp/T=0.01 RthJA=300K/W DT=Tjmax-Tamb
100
101 tp - Pulse Length ( ms )
102
95 9603
Figure 10 : Thermal Response
4
Rev. A1: 12.12.1994
TELEFUNKEN Semiconductors
BZT55C...
Dimensions in mm
Cathode Identification
technical drawings according to DIN specifications
94 9372
0.35 0.30 Quadro MELF Glass Case similar to JEDEC DO 213 AA 3.7 3.3
0.35 0.30
V 1.5 1.3
Rev. A1: 12.12.1994
5
BZT55C...
TELEFUNKEN Semiconductors
OZONE DEPLETING SUBSTANCES POLICY STATEMENT
It is the policy of TEMIC TELEFUNKEN microelectronic GmbH to 1. Meet all present and future national and international statutory requirements and 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. Of particular concern is the control or elimination of releases into the atmosphere of those substances which are known as ozone depleting substances ( ODSs). The Montreal Protocol ( 1987) and its London Amendments ( 1990) will soon severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. TEMIC TELEFUNKEN microelectronic GmbH semiconductor division has been able to use its policy of continuous improvements to eliminate the use of any ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency ( EPA) in the USA and 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively. TEMIC can certify that our semiconductors are not manufactured with and do not contain ozone depleting substances.
We reserve the right to make changes to improve technical design without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use TEMIC products for any unintended or unauthorized application, the buyer shall indemnify TEMIC against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. TEMIC TELEFUNKEN microelectronic GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 ( 0 ) 7131 67 2831, Fax Number: 49 ( 0 ) 7131 67 2423
6
Rev. A1: 12.12.1994

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